Comparison of Self-Assembled Monolayers on SiO2 and Porous SiOCH Dielectrics by Decyltrimethoxysilane Vapor Treatment

Self-assembled monolayers (SAMs) are emerging as materials that candidates of barriers used in back-end-of–line interconnects integrated circuits for future generations. In this study, SAMs were formed on the SiO2 and porous SiOCH (p-SiOCH) films by using decyltrimethoxysilane (DTMOS) precursor vapor phase at a temperature 100 °C. The effects formation surfaces p-SiOCH electrical characteristics characterized compared. With O2 plasma irradiation, could successfully form both films, thereby enhancing adhesion dielectric breakdown field. sealed surface pores had higher coverage, promoting effectiveness Cu barrier. Cu/porous low-k advanced technological nodes, therefore, promising acting barrier adhesive. On other hand, weakened barrier; however, they can act an interfacial enhancer.